page 1 NPT1015 nds - 035 rev. 2, 121213 g a ll i u m n i tr i d e 2 8 v , 45 w , dc - 3.5 ghz hemt built using the sigantic ? process - a proprietary gan - on - silicon technology dc - 3.5 ghz 45w gan hemt s ym b ol p a r am e t e r min t y p m a x u n i t s g ss sm al l - sig nal g ain - 13.5 - db p sat s a t u r a t e d o u tp ut p o w e r - 47.3 - d bm ? sat efficiency at s a t u r a t e d o u tp ut p o w e r - 57 - % g p g ain at p out = 45w 10.5 12 - db ? drain e f f i c ie n c y at p out = 45w 47 54 - % v ds drain voltage - 28 - v ? ruggedness: output mismatch, all phase angles vswr = 15:1, no device damage rf s p ec i fi c a t ion s ( c w , 2.5 gh z ) : v ds = 2 8 v , i d q = 400 m a , t c = 2 5 c product description the NPT1015 gan hemt is a wideband transistor optimized for dc - 3.5 ghz operation. this device has been designed for cw, pulsed, and linear operation with output power levels to 45w (46.5 dbm) in an industry standard metal - ceramic package with a bolt down flange. this product has been designed to be reliable, with a low thermal resistance, and rugged, able to withstand extreme mismatch on the input and output with no device damage. f eatures ? suitable for linear and saturated applications ? tunable f r o m dc - 3.5 g hz ? 28v operation ? industry standard package ? high drain efficiency (>55%) ? rugged design passes 15:1 vswr test ? reliable with mttf > 10 6 at t j = 200c applications ? defense communications ? land mobile radio ? avionics ? wireless infrastructure ? ism applications ? vhf/uhf/l - band radar
page 2 NPT1015 nds - 035 rev. 2, 121213 s ym b ol p a r am e t e r min t y p m a x u n i t s off characteristics i dlk drain - source leakage current (v gs = - 8v, v ds =100v) - - 16 ma i glk gate - source leakage current (v gs = - 8v, v ds =0v) - - 8 ma on characteristics v t gate threshold voltage (v ds =28v, i d =16ma) - 2.3 - 1.5 - 0.7 v v gsq gate quiescent voltage (v ds =28v, i d =400ma) - 2.1 - 1.2 - 0.5 v r on on resistance (v ds =2v, i d =120ma) - 0.22 - ? i d, max maximum drain current (v ds =7v pulsed, 300s pulse width, 0.2% duty cycle) - 9.2 - a dc s p ec i fi c a t ion s : t c = 2 5 c thermal resistance specification: symbol parameter t yp units r ? jc the r m al r esi s t an c e ( j un c tio n - t o - case ) , t j = 1 8 0 c 2.1 c / w ab s ol ut e m a xi m u m r a t in g s : n ot s imul t a neo us, t c = 2 5 c un le s s o the r wis e n o t e d symbol parameter max units v ds d r ai n - so u r c e v o l t a g e 1 0 0 v v g s g a t e - so u r c e v o l t ag e - 1 0 to 3 v i g g a t e cu r re n t 32 ma p t t o t a l d e vi c e p o w e r d i s s ipa tio n ( d er a t e d a b ov e 2 5 c ) 83 w t s tg s t or a g e t emper a t u r e r a ng e - 6 5 to 1 5 0 c t j o per a t i n g j un c tio n t emper a t u r e 2 00 c hbm human body model esd rating (per jesd22 - a114) class 1b junction temperature (t j ) measured using ir microscopy, case temperature (t c ) measured using a thermocouple embedded in heatsink.
page 3 NPT1015 nds - 035 rev. 2, 121213 frequency (mhz) z s ( ? z l ( ? p sat (w) g ss (db) drain efficiency @ p sat (%) 900 1.1 + j0.7 6.3 + j1.8 53.7 22.5 65.1 2200 1.6 - j6.0 5.4 - j0.6 53.2 15.8 64.8 2500 1.5 - j6.7 5.2 - j2.2 50.9 15.0 60.8 3500 2.6 - j15 3.9 - j6.3 42.0 13.9 55.4 optimum source and load impedances: (cw drain efficiency and output power tradeoff impedance) figure 1: cw power/drain efficiency tradeoff impedances, z o =10 ? load - pull data, reference plane at device leads v ds =28v, i dq =400ma, t c =25 ? c unless otherwise noted figure 2: gain vs. p out figure 3: drain efficiency vs. p out 10 12 14 16 18 20 22 24 25 30 35 40 45 50 900mhz 2200mhz 2500mhz 3500mhz gain (db) p out (dbm) 0 10 20 30 40 50 60 70 25 30 35 40 45 50 900mhz 2200mhz 2500mhz 3500mhz drain efficiency (%) p out (dbm)
page 4 NPT1015 nds - 035 rev. 2, 121213 2.5 ghz narrowband circuit (cw, v ds =28v, i dq =400ma, t c =25 ? c, unless otherwise noted) figure 4: component placement of 2.5 ghz narrowband circuit for NPT1015 reference value manufacturer part number c1, c5 1uf avx 1210c105kat2a c2, c6 0.1uf kemet c1206c104k1ractu c3, c7 0.01uf avx 1206c103kat2a c4, c8 1000pf kemet c0805c102k1ractu c9, c14 10pf atc atc800b100b c10 20pf atc atc800b200b c11 2.4pf atc atc600f2r4b c12 2.2pf atc atc600f2r2b c13 10pf atc atc600f100b c15 0.6pf atc atc600f0r6b l1 19.4nh coilcraft 0806sq - 19njl r1 15? panasonic erj - 2rkf15r0x pcb ro4350, ? r =3.5, 0.020 rogers nitronex nbd - 139r1
page 5 NPT1015 nds - 035 rev. 2, 121213 typical performance in 2.5 ghz narrowband circuit (cw, v ds =28v, i dq =400ma, f=2.5ghz, t c =25 ? c, unless otherwise noted) figure 6: gain vs. p out figure 8: quiescent v gs vs. temperature figure 9: power de - rating curve (t j = 200c, t c > 25c) figure 5. electrical schematic of 2.5 ghz narrowband circuit for NPT1015 (for rf tuning details see component placement diagram figure 4) figure 7: drain efficiency vs. p out -1.6 -1.5 -1.4 -1.3 -1.2 -1.1 -50 -25 0 25 50 75 100 200ma 400ma 600ma v gsq (v) temperature ( o c) 0 20 40 60 80 100 25 50 75 100 125 150 175 total power dissipation (w) case temperature ( o c) 0 10 20 30 40 50 60 25 30 35 40 45 50 -40 0 c 25 0 c 85 0 c drain efficiency (%) p out (dbm) 10 11 12 13 14 15 25 30 35 40 45 50 -40 0 c 25 0 c 85 0 c gain (db) p out (dbm)
page 6 NPT1015 nds - 035 rev. 2, 121213 typical performance in 2.5 ghz narrowband circuit (cw, v ds =28v, i dq =400ma, f=2.5ghz, t c =25 ? c, unless otherwise noted) figure 10: 2 - tone imd3 vs. p out vs. i dq (1mhz tone spacing) figure 12: 2 - tone imd vs. p out (1mhz tone spacing) figure 11: 2 - tone gain vs. p out vs. i dq (1mhz tone spacing) 12.0 12.5 13.0 13.5 14.0 14.5 15.0 0.1 1 10 100 200ma 300ma 400ma 600ma 800ma gain (db) p out (w-pep) -50 -45 -40 -35 -30 -25 -20 -15 0.1 1 10 100 200ma 300ma 400ma 600ma 800ma imd (dbc) p out (w-pep) -55 -50 -45 -40 -35 -30 -25 -20 0.1 1 10 100 -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 imd (dbc) p out (w-pep)
page 7 NPT1015 nds - 035 rev. 2, 121213 600 - 1000 mhz broadband circuit (cw, v ds =28v, i dq =400ma, t c =25 ? c, unless otherwise noted) figure 13: component placement of 600 - 1000 mhz broadband circuit for NPT1015 reference value manufacturer part number c1 150uf nichicon upw1c151med c2, c5 0.01uf avx 1206c103kat2a c3, c6 0.1uf kemet c1206c104k1ractu c4, c7 1uf avx 1210c105kat2a c8 270uf united chemi - con elxy 630ell271mk25s c9 56pf atc atc100b560j c10, c12 100pf atc atc100b101j c11 6.8pf atc atc100b6r8j r1, r2 0.33? panasonic erj - 6rqfr33v r3 10? panasonic erj - 6enf10r0v r4, r5 7.5? stackpole rhc2512ft7r50 l1 120nh coilcraft 0805cs - 121xjb l2 ~50nh 16 awg cu wire 5 turn, 0.2"id pcb ro4350, ? r =3.5, 0.020 rogers nitronex nbd - 079r1
page 8 NPT1015 nds - 035 rev. 2, 121213 typical performance in 600 - 1000 mhz broadband circuit (cw, v ds =28v, i dq =400ma, t c =25 ? c, unless otherwise noted) figure 14. electrical schematic of 600 - 1000 mhz broadband circuit for NPT1015 (for rf tuning details see component placement diagram figure 13) figure 15: performance vs. frequency (p out = p sat ) figure 16: performance vs. frequency (p out = 45dbm) figure 17: gain/drain efficiency vs. p out (f = 700mhz) figure 18: small signal s - parameters vs. frequency 5 10 15 20 25 40 50 60 70 80 600 700 800 900 1,000 gain drain eff psat gain (db) p sat (dbm), drain efficiency (%) frequency (mhz) 10 15 20 25 30 30 40 50 60 70 600 700 800 900 1,000 gain drain eff gain (db) drain efficiency (%) frequency (mhz) 15.0 16.0 17.0 18.0 19.0 20.0 0 10 20 30 40 50 60 70 25 30 35 40 45 50 gain drain eff gain (db) drain efficiency (%) p out (dbm) 10 15 20 25 30 35 -30 -25 -20 -15 -10 -5 500 600 700 800 900 1,000 s21 s11 s22 magnitude s 21 (db) magnitude s 11 , s 22 (db) frequency (mhz)
page 9 NPT1015 nds - 035 rev. 2, 121213 f igur e 19 - ac360b - 2 metal - ceramic package dimensions (all dimensions in inches [millimeters]) function gate rf input drain rf output (cut lead) source ground (flange)
page 10 NPT1015 nds - 035 rev. 2, 121213 n i t r o n e x, llc 2 30 5 p reside n tia l d r i ve d u r h am, n c 2 7 7 0 3 us a + 1 . 9 1 9 . 8 0 7 . 9 1 0 0 ( t elephon e ) + 1 . 9 1 9 . 8 0 7 .92 0 0 ( f a x ) inf o @ ni t ron e x . c o m ww w .ni t ron e x . c om a d d i t iona l i n f o r ma t io n t h i s pa r t i s l ea d - f r e e an d i s c o m p l ian t wi t h th e r o h s dire ct i v e ( r e s tr i ct ion s o n th e use o f ce r t ai n h a z a r d o u s s u b s t an ce s i n e l e ctr i c a l an d e l e ct r oni c e q u i pm en t ). i m po r t an t no t i c e n i t ron e x, llc rese r v e s th e r ig h t to m a k e c o r re c tio ns, m o d i f i c a tio ns, e nhan c eme n t s, i mpr ov eme n t s a n d o the r c h a nge s to i t s pr o du ct s a n d se r vi c e s at a n y t i m e a n d to d is c o n t in u e a n y pr o du c t o r se r vi c e w i tho ut n o ti c e . cust ome r s s ho u l d o b t ain t h e la t e st rel ev a n t inf o r m a tio n b e f or e p la c i n g orde r s a n d s ho u l d v e r i f y t hat su c h inf o r m a tio n i s c u r re n t a n d c ompl et e . a ll pr o du ct s a r e sol d su bje c t to n i tron e x t e r m s a n d c on di tio ns of s a l e su pp l ie d at th e t i m e of orde r a ck n o w ledgme n t . th e la t e st inf o r m a t i o n f ro m n i tron e x c an b e f o u n d e i the r b y c a lli n g n i tron e x at 1 - 9 1 9 - 8 0 7 - 9 1 0 0 o r vis i t i n g o ur w ebs i t e at ww w .ni t ron e x . c o m. n i t ron e x w a r r a n t s pe r f o r m an c e of i t s pa c k age d semi c on du c t o r o r d i e to th e s pe c i f i c a tio ns a pp l i c a bl e at th e t i m e of sal e in a c c or dan c e w i t h n i tron e x s t a n da r d w a r r a n t y . t e s t i n g a n d o the r quali t y c o n tro l t e c hn i q ue s a r e u se d to th e e x t e n t n i t ron e x deem s ne c e s s a r y to su p- po r t th e w a r r a n t y . e x c e p t wher e m a n da t e d b y g ov e r n me n t re qu ireme n t s, t e s t i n g of all pa r a m et e r s of e a c h pr o du c t i s n ot ne c e s sa r i ly pe r f o r me d . n i t ron e x a s su me s n o l i a bi li t y f o r a pp l i c a tio ns a s si s t an c e o r c ust ome r pr o du c t desig n . cust ome r s a r e re s po n s i bl e f o r t hei r pr o du c t a n d a pp l i c a tio ns u s i n g n i tron e x semi c on du c t o r pr o du ct s o r se r vi c e s. t o m ini m i z e th e r i s k s a s so c i a t e d w i t h c ust ome r pr o du ct s a n d a pp l i c a- tio ns, c ust ome r s s ho u l d pr o vid e a de qua t e desig n a n d oper a t i n g s af eg u ar ds. n i t ron e x d o e s n ot w a r r a n t o r represe n t t hat a n y l i c e n s e , e i the r e xpre s s o r i mp l ie d , i s gr a nt e d u nde r a n y n i tron e x pa t e n t r ig h t , c o p y r ig h t , m ask w o r k r ig h t , o r o the r n i tron e x i nt e l le c tual prope r t y r ig h t re la t i n g to a n y c omb ina tio n , m a c hi n e o r pr o c e s s in w h i c h n i t ron e x pr o du ct s o r se r vi c e s a r e u se d . r epr o du c t i o n of inf o r m a tio n in n i tron e x da t a s he e t s i s pe r m i t t e d i f a n d o nly i f s a i d repr o du c tio n doe s n ot al t e r a n y of th e inf o r m a t i o n a n d i s a c c om pan ie d b y all a s s o c i a t e d w a r r a n tie s, c on di tio ns, li m i t a tio ns a n d n o ti c e s. a n y al t er a tio n of th e c o n t ai ne d inf o r m a tio n i nv al i da t e s all w a r r a n tie s a n d n i tron e x i s n ot re s po n s i bl e o r l i a bl e f o r a n y su c h s t a t eme n t s. n i t ron e x pr o du ct s a r e n ot i nt ende d o r au tho r i z e d f o r u s e in l i fe su ppo r t s ys t em s, in c l u di n g but n ot li m i t e d to su r g i c al i mp la n t s i n to t h e b o dy o r a n y o the r a pp l i c a tio n i nt ende d to su ppo r t o r sus t ain l i f e . sho u l d b u y e r p u r c ha s e o r u s e n i t ron e x, llc pr o du ct s f o r a n y su c h uni nt ende d o r unau tho r i z e d a pp l i c a tio n , b u y e r sh a ll i ndem n i f y a n d hol d n i tron e x, llc, i t s o f f i c e r s, empl oy ee s, su bsi d i a r ie s, a f f i l i a t e s, d i s t r ibut o r s, a n d i t s su cc e s so r s h a r mle s s a g ainst all c lai m s, c o s t s, da m a ge s, a n d e xpe n se s, a n d re a so na bl e a t t o r n e y f ee s a r is i n g o ut o f , d ire ct ly o r i n d ire ct l y , a n y c laim of pe r so nal inju r y o r de a t h a s so c i a t e d w i t h su c h uni nt ende d o r unau tho r i z e d u s e , n o t w i t hs t a n di n g i f su c h c laim al lege s t hat n i t ron e x w as neg l ige n t reg a r di n g th e desig n o r m an uf a c tu r e of s a i d pr o du ct s. n i t ron e x a n d t h e n i tron e x l o g o a r e re g i s t ere d tr a dema r k s of n i tron e x, llc . a ll o t he r pr o du c t o r se r vi c e na me s a r e th e prope r t y of thei r re s pe c ti v e o wne r s. ? n i t ron e x, llc 2 0 13 a ll r ig h t s rese r v e d .
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